3CD6D Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-10mA ;I_B=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-1mA ;I_B=0
V_CEsat Collector-emitter saturation voltage I_C=-2.5A; I_B=-0.5A
V_BEsat Base-emitter saturation voltage
I_C=-2.5A; I_B=-0.5A
I_CBO
Collector cut-off current
V_CB=-110V; I_E=0
I_CEO
Collector cut-off current
V_CE=-110V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-4V; I_C=0
h_FE
DC current gain
I_C=-2.5A ; V_CE=-10V
Product Specification
3CD6D
MIN TYP. MAX UNIT
-110
V
-4
V
-1.0 -1.5
V
-2.0
V
-0.1 mA
-1.0 mA
-0.1 mA
10
180
2