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| 2SK950 Datasheet, PDF (2/2 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK950
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=10mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3.5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VSD
Forward On-Voltage
IS=6A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=30V;ID=2.7A;
RL=50Ω
toff
Turn-off time
MIN TYP. MAX UNIT
500
V
2.1
3.0
4.0
V
1.0 1.2
Ω
±100 nA
500 uA
1.0 1.5
V
40
70
ns
65
110
ns
60
100
ns
260 400 ns
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