2SK763 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK763
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=25 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=320V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=3A;
RL=50Ω
MIN TYP MAX UNIT
400
V
1.0
5.0
V
0.9
1.4
Ω
±1
uA
100
uA
40
ns
170
ns
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