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| 2SK554 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK554
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS= 10V; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=4A
VSD
Diode Forward Voltage
IGSS
Gate Source Leakage Current
IF=7A; VGS=0
VGS= ±16V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 360V; VGS= 0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=4A;
RL=7.5Ω
toff
Turn-off time
MIN TYP. MAX UNIT
450
V
2.0
4.0
V
0.6 0.85 Ω
1.0
V
±10 uA
250 uA
50
ns
65
ns
55
ns
155
ns
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