 English |
|
|
|
|
|
|
|
| 2SK415 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – HIGH SPEED POWER SWITCHING | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK415
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS= 10V; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID= 2A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=640V; VGS= 0
VSD
Diode Forward Voltage
IF= 2A; VGS= 0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=15V;ID=2A;RL=15Ω
toff
Turn-off time
MIN TYP. MAX UNIT
800
V
2.0
4.0
V
5.0
6.0
Ω
±1
uA
1
mA
0.9
V
35
ns
50
ns
35
ns
120
ns
isc websiteï¼www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese