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| 2SK2024-01 Datasheet, PDF (2/2 Pages) Fuji Electric – Power MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25â)
isc Product Specification
2SK2024-01
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID=1mA
VGS= 10V; ID= 1.5A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
td(on) Turn-on Delay Time
tf
Fall Time
td(off) Turn-off Delay Time
VGS=10V;
ID=3A;
VDD=300V;
RL=10Ω
MIN TYPE MAX UNIT
600
V
2.5
3.0
3.5
V
4.0
4.5
Ω
±100 nA
10
500
µA
600 900
10
15
pF
50
75
10
15
15
25
ns
10
15
40
60
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