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| 2SK1876 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Low on-resistance | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25â)
isc Product Specification
2SK1876
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
V(BR)GSS Gate-Source Breakdown Voltage
VGS= 0; ID= 1mA
VDS= 0; IG= 100μA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
VDF
Body to drain diode forward voltage IS= 5A, VGS = 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID=5A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=450V; VGS= 0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=10V;
VGS=0V;
fT=1MHz
tr
Rise Time
ton
Turn-on Time
tf
Fall Time
toff
Turn-off Time
VGS=10V;
ID=2.5A;
VDD=200V;
RL=12Ω
MIN TYPE MAX UNIT
450
V
±30
V
2.5
3.5
V
0.9
V
0.65
Ω
±100 nA
500
μA
1800
100
pF
240
120
45
ns
120
240
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