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| 2SK1833 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25â)
isc Product Specification
2SK1833
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= 25V; ID=1mA
VDF
Body to drain diode forward voltage IS= 2.5A, VGS = 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 1.5A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
ton
Turn-on Time
tf
Fall Time
toff
Turn-off Time
VDS=20V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=1.5A;
VDD=150V;
RL=100Ω
MIN TYPE MAX UNIT
500
V
2.0
5.0
V
1.5
V
3.2
4.0
Ω
±100 nA
1
μA
300 400
20
23
pF
55
48
40
30
ns
55
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