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| 2SK1821 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1821
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=10mA
VDF
Body to drain diode forward voltage IF = 4 A, VGS = 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 1A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=600V; VGS= 0
Ciss
Input Cpacitance
Crss
Reverse Tansfer Cpacitance
Coss
Output Cpacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Tme
ton
Turn-on Tme
tf
Fall Tme
toff
Turn-off Tme
VGS=10V;
ID=2A;
VDD=300V;
RL=25Ω
TYPE
MIN
MAX UNIT
600
V
2.1
4.0
V
0.92 1.41
V
5.5
6.5
Ω
±100 nA
500
µA
270 400
15
23
pF
32
48
12
18
4
6
20
ns
30
25
40
isc websiteï¼www.iscsemi.cn
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