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| 2SK1819 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25â)
isc Product Specification
2SK1819
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID=10mA
VGS= 10V; ID= 2.5A
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 450V; VGS= 0
Ciss
Input capacitance
Crss
Reverse transfer capacitance
Coss
Output capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise time
ton
Turn-on time
tf
Fall time
toff
Turn-off time
VGS=10V;
ID=5A;
VDD=300V;
RL=25Ω
MIN TYPE MAX UNIT
450
V
2.1
4.0
V
0.78 2.5
Ω
±100 nA
500
µA
500 750
40
60
pF
80
120
30
45
25
40
ns
50
75
110
170
isc websiteï¼www.iscsemi.cn
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