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| 2SK1805 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25â)
isc Product Specification
2SK1805
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= 10V; ID=1mA
VGS= 10V; ID= 4A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=10V;
VGS=0V;
fT=1MHz
tr
Rise Time
ton
Turn-on Time
tf
Fall Time
toff
Turn-off Time
VGS=10V;
ID=4A;
VDD=200V;
RL=50Ω
MIN TYPE MAX UNIT
500
V
2
4
V
0.85
Ω
±100 nA
300
µA
870 1100
75
140
pF
210 300
60
120
ns
70
200
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