2SK1649 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
2SK1649
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=720V; VGS= 0
VSD
Diode Forward Voltage
IF=6A; VGS=0
MIN TYP MAX UNIT
900
V
1.5
3.5
V
2.5
Ω
±100 nA
300
uA
2.0
V
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