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| 2SK1613 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=5A@ TC=25C | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1613
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
900
V
VGS(th) Gate Threshold Voltage
VDS=25V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
2.0
5.0
V
2.0
2.8
Ω
±1
uA
IDSS
Zero Gate Voltage Drain Current
VDS=720V; VGS= 0
0.1 m A
ton
Turn-on time
toff
Turn-off time
90
ns
VGS=10V;ID=3A;RL=66Ω
250
ns
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