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| 2SK1611 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1611
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=25V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=640V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=2A;RL=100Ω
MIN TYP MAX UNIT
800
V
1.0
5.0
V
3.2
4.0
Ω
±1
uA
100
uA
40
ns
140
ns
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