 English |
|
|
|
|
|
|
|
| 2SK1609 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=8A@ TC=25C | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1609
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=25V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=5A;RL=30Ω
MIN TYP MAX UNIT
500
V
1.0
5.0
V
0.7
1.0
Ω
±1
uA
100
uA
100
ns
200
ns
isc websiteï¼www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese