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| 2SK1606 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=8A@ TC=25C | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1606
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
450
V
VGS(th) Gate Threshold Voltage
VDS=25V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
1.0
5.0
V
0.56 0.75
Ω
±1
uA
IDSS
Zero Gate Voltage Drain Current
VDS=360V; VGS= 0
100
uA
ton
Turn-on time
toff
Turn-off time
70
ns
VGS=10V;ID=4A;RL=37.5Ω
200
ns
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