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2SK1544 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – N Channel MOS Type (pie -MOS III.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1544
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=13A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Diode Forward Voltage
IF=25A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=13A;RL=16Ω
toff
Turn-off time
MIN TYP MAX UNIT
500
V
1.5
3.5
V
0.15 0.20
Ω
±100 nA
300
uA
1.6
V
285
ns
240
ns
250
ns
590
ns
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