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| 2SK1527 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=40A@ TC=25C | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1527
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
500
V
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=20A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
2.0
3.0
V
0.12 0.16
Ω
±10 uA
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
250
uA
VSD
Diode Forward Voltage
IF=40A; VGS=0
1.2
V
tr
Rise time
175
ns
ton
Turn-on time
tf
Fall time
235
ns
VGS=10V;ID=20A;RL=1.5Ω
160
ns
toff
Turn-off time
580
ns
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