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| 2SK1519 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1519
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=360V; VGS= 0
VSD
Diode Forward Voltage
IF=30A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=15A;RL=3Ω
toff
Turn-off time
MIN TYP MAX UNIT
450
V
2.0
3.0
V
0.11 0.15
Ω
±10 uA
250
uA
1.1
V
170
ns
235
ns
200
ns
615
ns
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