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2SK1518 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=20A@ TC=25C
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1518
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=10A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
VSD
Diode Forward Voltage
IF=20A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=10A;RL=3Ω
toff
Turn-off time
MIN TYP MAX UNIT
500
V
2.0
3.0
V
0.22 0.27
Ω
±10 uA
250
uA
1.0
V
130
ns
165
ns
105
ns
345
ns
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