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2SK1503 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=10A@ TC=25C
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1503
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=0; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Diode Forward Voltage
IF=10A; VGS=0
MIN TYP MAX UNIT
500
V
2.5
3.5
5.0
V
0.7
0.9
Ω
±100 nA
500
uA
1.10 1.65
V
tr
Rise time
35
ns
ton
Turn-on time
tf
Fall time
toff
Turn-off time
50
ns
VGS=10V;ID=10A;RL=25Ω
65
ns
265
ns
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