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| 2SK1488 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1488
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Diode Forward Voltage
IF=10A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=5A;RL=40Ω
toff
Turn-off time
MIN TYP MAX UNIT
500
V
2.0
4.0
V
0.75 1.0
Ω
±100 nA
300
uA
2.0
V
30
90
ns
60
140
ns
35
130
ns
100 300
ns
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