 English |
|
|
|
|
|
|
|
| 2SK1486 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1486
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=16A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=300V; VGS= 0
VSD
Diode Forward Voltage
IF=32A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=16A;RL=50Ω
toff
Turn-off time
MIN TYP MAX UNIT
300
V
2.0
4.0
V
0.08 0.095
Ω
±100 nA
300
uA
1.8
V
255
ns
325
ns
280
ns
540
ns
isc websiteï¼www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese