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| 2SK1478 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1478
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=25V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=200V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=5A;RL=20Ω
MIN TYP MAX UNIT
250
V
1.0
5.0
V
0.4
0.6
Ω
±1
uA
0.1
mA
72
ns
180
ns
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