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| 2SK1454 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Very High-Speed Switching Applications | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1454
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=450V; VGS= 0
VSD
Diode Forward Voltage
IF=30A; VGS=0
MIN TYP MAX UNIT
450
V
2.0
3.0
V
0.12 0.16
Ω
±100 nA
1
mA
1.8
V
tr
Rise time
140
ns
ton
Turn-on time
tf
Fall time
toff
Turn-off time
195
ns
VGS=10V;ID=15A;RL=50Ω
350
ns
1350
ns
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