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| 2SK1445 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1445
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=450V; VGS= 0
VSD
Diode Forward Voltage
IF=5A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=3A;RL=50Ω
toff
Turn-off time
MIN TYP MAX UNIT
450
V
2.0
3.0
V
1.0
1.4
Ω
±100 nA
1
mA
1.8
V
30
ns
45
ns
45
ns
175
ns
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