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| 2SK1403 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1403
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Diode Forward Voltage
IS=8A; VGS=0
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=4A;
RL=7.5Ω
MIN TYP MAX UNIT
600
V
2.0
3.0
V
0.9
1.3
Ω
±10 µA
250
µA
0.95
V
50
15
ns
45
105
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