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| 2SK1386 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1386
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= 0V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=450V; VGS= 0
VSD
Diode Forward Voltage
IF=7A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=6A;RL=25Ω
toff
Turn-off time
MIN TYP MAX UNIT
450
V
2.5
3.5
5.0
V
0.98 1.3
Ω
±100 nA
500
uA
1.1 1.65
V
50
80
ns
70
110
ns
50
80
ns
130 200
ns
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