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| 2SK1385 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=9A@ TC=25C | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1385
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
800
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
2.5
3.5
5.0
V
1.0 1.5
Ω
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
500 uA
VSD
Diode Forward Voltage
IF=9A; VGS=0
1.5 1.58
V
tr
Rise time
230 350
ns
ton
Turn-on time
tf
Fall time
VGS=10V;ID=9A;RL=25Ω
280 425
ns
160 240
ns
toff
Turn-off time
460 690
ns
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