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| 2SK1384 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – N-CHANNEL ENHANCEMENT TYPE MOS-FET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1384
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-stage Resistance
IGSS
Gate Source Leakage Current
VDS= VGS; ID=1mA
VGS=10V; ID=2.5A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=2.5A;
RL=50Ω
VSD
Diode Forward Voltage
IF=5A; VGS=0
MIN TYP. MAX UNIT
800
V
2.1
3.0
4.0
V
1.5 2.0
Ω
±100 nA
500 uA
30
50
ns
420 630
ns
1.0
1.5
V
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