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2SK1377 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=5.5A@ TC=25C
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1377
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=2A;RL=50Ω
toff
Turn-off time
MIN TYP MAX UNIT
400
V
1.5
3.5
V
0.8
1.2
Ω
±100 nA
1
mA
25
50
ns
40
80
ns
35
70
ns
140 280
ns
isc website:www.iscsemi.cn
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