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| 2SK1351 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – 2SK1351 | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1351
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
500
V
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2.5A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
1.5
3.5
V
1.3
1.5
Ω
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
300
uA
VSD
Diode Forward Voltage
IF=5A; VGS=0
2.0
V
tr
Rise time
15
30
ns
ton
Turn-on time
tf
Fall time
VGS=10V;ID=2.5A;RL=90Ω
30
60
ns
15
30
ns
toff
Turn-off time
40
85
ns
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