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| 2SK1342 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1342
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=720V; VGS= 0
VSD
Diode Forward Voltage
IF=8A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=4A;RL=7.5Ω
toff
Turn-off time
MIN TYP MAX UNIT
900
V
2.0
3.0
V
1.2
1.6
Ω
±10 uA
250
uA
0.9
V
135
ns
160
ns
130
ns
315
ns
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