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| 2SK1280 Datasheet, PDF (2/2 Pages) Fuji Electric – N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W) | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1280
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= 0V; ID=10mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=9A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Diode Forward Voltage
IF=18A; VGS=0
MIN TYP MAX UNIT
500
V
2.1
3.0
4.0
V
0.35 0.50
Ω
±100 nA
500
uA
0.85 1.6
V
tr
Rise time
150 220
ns
ton
Turn-on time
tf
Fall time
toff
Turn-off time
VGS=10V;ID=18A;RL=25Ω
185 270
ns
180 270
ns
630 900
ns
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