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| 2SK1278 Datasheet, PDF (2/2 Pages) Fuji Electric – N-channel MOS-FET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1278
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= 0V; ID=10mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Diode Forward Voltage
IF=10A; VGS=0
MIN TYP MAX UNIT
500
V
2.1
3.0
4.0
V
0.8
1.1
Ω
±100 nA
500
uA
0.95 1.8
V
tr
Rise time
60
90
ns
ton
Turn-on time
tf
Fall time
toff
Turn-off time
VGS=10V;ID=10A;RL=25Ω
85
130
ns
90
140
ns
200 300
ns
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