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| 2SK1277 Datasheet, PDF (2/2 Pages) Fuji Electric – N-Channel MOS-FET(250V, 0.12Ohm, 30A, 150W) | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1277
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=10mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=250V; VGS= 0
VSD
Diode Forward Voltage
IF=30A; VGS=0
MIN TYP MAX UNIT
250
V
2.1
3.0
4.0
V
0.09 0.12
Ω
±100 nA
500
uA
0.9
1.8
V
tr
Rise time
140 210
ns
ton
Turn-on time
tf
Fall time
toff
Turn-off time
VGS=10V;ID=30A;RL=25Ω
175 260
ns
180 270
ns
600 900
ns
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