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| 2SK1211 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=2.5A@ TC=25C | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1211
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
MIN TYP. MAX UNIT
800
V
2.5
3.5
5.0
V
7.0
Ω
±100 nA
500 uA
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