 English |
|
|
|
|
|
|
|
| 2SK1203 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – SILICON N-CHANNEL MOS FET | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1203
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=720V; VGS= 0
VSD
Diode Forward Voltage
IF=6A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=3A;RL=10Ω
toff
Turn-off time
MIN TYP MAX UNIT
900
V
2.0
4.0
V
2.0
3.0
Ω
±10 uA
250
uA
1.0
V
150
ns
165
ns
120
ns
250
ns
isc websiteï¼www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese