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| 2SK1172 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – N-CHANNEL SILICON POWER MOS-FET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1172
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=900V; VGS= 0
VSD
Forward On-Voltage
IS=3.5A; VGS=0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=4A;
RL=25Ω
MIN TYP. MAX UNIT
900
V
2.5
3.5
5.0
V
4.0 5.5
Ω
±100 nA
500 uA
0.9 1.35
V
95
145
ns
170 255
ns
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