2SK1105 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
2SK1105
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 1.5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
VSD
Forward On-Voltage
IS=3A; VGS=0
Gfs
Forward Transconductance
VDS= 25V；ID=1.5A
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=2.1A;
RL=50Ω
toff
Turn-off time
MIN TYP. MAX UNIT
800
V
2.1
3.0
4.0
V
3.0 4.0
Ω
±100 nA
500 uA
1.0 1.35
V
2.0
S
40
60
ns
20
30
ns
60
90
ns
150 250
ns
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