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| 2SK1099 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – N-CHANNEL SILICON POWER MOS-FET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1099
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Forward On-Voltage
IS=10A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=2.8A;
RL=50Ω
toff
Turn-off time
MIN TYP. MAX UNIT
500
V
2.1
3.0
4.0
V
0.5
0.67
Ω
±100 nA
500 uA
1.1 1.7
V
80
120
ns
130 195
ns
100 140
ns
430 570 ns
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