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| 2SK1017 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=20A@ TC=25C | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1017
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 10A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=450V; VGS= 0
VSD
Forward On-Voltage
IS=20A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=20A;
RL=25Ω
toff
Turn-off time
MIN TYP. MAX UNIT
450
V
2.5
3.5
5.0
V
0.26 0.35
Ω
±100 nA
500 uA
1.25 1.88
V
200 300
ns
250 375
ns
190 290
ns
490 740 ns
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