 English |
|
|
|
|
|
|
|
| 2SK1015 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=12A@ TC=25C | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1015
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 6A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Forward On-Voltage
IS=12A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=12A;
RL=25Ω
toff
Turn-off time
MIN TYP. MAX UNIT
500
V
2.5
3.5
5.0
V
0.59 0.74
Ω
±100 nA
500 uA
1.1 1.5
V
110 170
ns
140 215
ns
90
140
ns
240 370 ns
isc websiteï¼www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese