2SK1008 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
2SK1008
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2.5A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VSD
Forward On-Voltage
IS=4.5A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=10A;
RL=25Ω
toff
Turn-off time
MIN TYP. MAX UNIT
500
V
2.5
3.5
5.0
V
1.5
2.2
Ω
±100 nA
500 uA
1.0
1.5
V
50
80
ns
60
95
ns
50
80
ns
130 200
ns
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