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| 2SD898 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA; IC=0;
VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8 A
VBEsat Base-emitter saturation voltage
IC=2.5A;IB=0.8 A
ICES
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCE=1500V;RBE=0
VEB=6V;IC=0
IC=0.5A ; VCE=5V
VF
Diode forward voltage
IF=3A
Product Specification
2SD898
MIN TYP. MAX UNIT
6
V
5.0
V
1.5
V
0.5
mA
50
200
mA
10
40
2.2
V
2
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