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| 2SD896 Datasheet, PDF (2/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=â
V(BR)CBO Collector-base breakdown voltage
IC=5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=B 0.4A
VBE
Base-emitter on voltage
IC=1A;VCE=5V
ICBO
Collector cut-off current
VCB=80V IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=1.0A; IB1=-IB2=0.1A
RL=20Ω;VCC=20V
 hFE-1 Classifications
D
E
60-120
100-200
Product Specification
2SD896
MIN TYP. MAX UNIT
100
V
120
V
6
V
0.6 2.0
V
1.5
V
0.1 mA
0.1 mA
60
200
20
15
MHz
140
pF
0.2
μs
6.0
μs
0.6
μs
2
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