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| 2SD870 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,1500V,50W) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200m A;IC=0
VCEsat Collector-emitter saturation voltage IC=4 A;IB=B 0.8 A
VBEsat Base-emitter saturation voltage
IC=4 A;IB=B 0.8 A
ICBO
Collector cut-off current
VCB=500V;IE=0
hFE
DC current gain
IC=1A ; VCE=5V
VF
Diode forward voltage
IF=5A
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
tf
Fall time
IC=4A;IB1end=0.8A
Product Specification
2SD870
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
10 μA
8
2.0
V
3
MHz
165
pF
1.0 μs
2
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