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| 2SD2275 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification) | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2275
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 4mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 4mA
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
ICEO
Collector Cutoff Current
VCE= 100V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 0.5A; VCE= 10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC= 50V,
IC= 4A; IB1= -IB2= 4mA,
 hFE-2 Classifications
Q
S
P
5000-15000 7000-21000 8000-30000
MIN TYP. MAX UNIT
100
V
2.5
V
3.0
V
100 μA
100 μA
100 μA
2000
5000
30000
20
MHz
2.5
μs
3.5
μs
1.0
μs
isc Websiteï¼www.iscsemi.cn
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