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| 2SD2106 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2106
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= â
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB=B 60mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 3A; IB=B 6mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 6A; IB=B 60mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
ICEO
Collector Cutoff Current
VCE= 100V; RBE= â
hFE
DC Current Gain
IC= 3A; VCE= 3V
MIN TYP. MAX UNIT
120
V
120
V
7
V
1.5
V
3.0
V
2.0
V
3.5
V
10
μA
10
μA
1000
20000
isc Websiteï¼www.iscsemi.cn
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