 English |
|
|
|
|
|
|
|
| 2SD2066 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=0.8A
VBE
Base-emitter on voltage
IC=8A;VCE=5V
ICBO
Collector cut-off current
VCB=160V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=8A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
 hFE-2 Classifications
Q
P
60-120
100-200
Product Specification
2SD2066
MIN TYP. MAX UNIT
160
V
2.0
V
1.8
V
50
A
50
A
20
60
200
15
20
MHz
210
pF
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese